Semiconductor device
US11778810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | May 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
A semiconductor device may include a substrate including trenches and contact recesses having a curved surface profile, conductive patterns in the trenches, buried contacts including first portions filling the contact recesses and second portions on the first portions, and spacer structures including first and second spacers. The second portions may have a pillar shape and a smaller width than top surfaces of the first portions. The buried contacts may be spaced apart from the conductive patterns by the spacer structures. The first spacers may be on the first portions of the buried contacts at outermost parts of the spacer structures. The first spacers may extend along the second portions of the buried contacts and contact the buried contacts. The second spacers may extend along the side surfaces of the conductive patterns and the trenches. The second spacers may contact the conductive patterns. The first spacers may include silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.