Silicon quantum device structures defined by metallic structures
US11778927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2021 |
| Grant date | Oct 3, 2023 |
| Priority date | — |
| Expiry date | Aug 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/402
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A silicon-based quantum device is provided. The device comprises: a first metallic structure (501); a second metallic structure (502) laterally separated from the first metallic structure; and an L-shaped elongate channel (520) defined by the separation between the first and second metallic structures; wherein the elongate channel has a vertex (505) connecting two elongate parts of the elongate channel. The device further comprises: a third metallic structure (518), mediator gate, positioned in the elongate channel; a fourth metallic structure (531) forming a first barrier gate, arranged at a first end of the third metallic structure; and a fifth metallic structure (532) forming a second barrier gate arranged at a second end of the third metallic structure. The first, second, third, fourth and fifth metallic structures are configured for connection to first, second, third, fourth and fifth electric potentials respectively. The first, second, fourth and fifth electric potentials are controllable to define an electrical potential well to confine quantum charge carriers in an elongate quantum dot beneath the elongate channel. The fourth and fifth electric potentials and the position o…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.