Forming method of thin layer
US11780728B2 · kind B2 · utility
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2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2020 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Sep 5, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B1/115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A forming method of a thin layer with a pore is provided. The method includes forming a thin layer on a substrate, stacking a first mask and a second mask on the thin layer in this order, and forming a pore in the thin layer by dry etching. The first mask includes at least a self-assembling material. The second mask is more resistant to reactive etching or physical etching than the first mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.