Layered polycrystalline lead selenide photoelectric film and fabrication method thereof

US11781222B2 · kind B2 · utility

Assignee

• JIANGSU UNIVERSITY · CN

Inventors

• Guiwu Liu · 安丰镇, CN
• Junlin Liu · Tangxia, CN
• Yuan ZHU · Longbeilingcun, CN
• Guanjun Qiao · Loudi, CN
• Xiangzhao Zhang · 安丰镇, CN
• Quanjiang Lv · 安丰镇, CN
• Haigang Hou · 安丰镇, CN
• Jian Yang · Zhejiang, CN

Key dates

• Filing date: Mar 25, 2021
• Grant date: Oct 10, 2023
• Expiry date: Mar 25, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a photoelectric film and a fabrication method thereof, and in particular, to a layered polycrystalline lead selenide (PbSe) film and a fabrication method thereof. The fabrication method mainly includes: (1) fabricating a dense PbSe layer on a substrate through chemical bath deposition (CBD); (2) fabricating a loose plumbonacrite (Pb10O(OH)6(CO3)6) layer on the dense PbSe layer through CBD; (3) placing a sample with the dense PbSe layer and the Pb10O(OH)6(CO3)6 layer in a selenium ion-containing solution to allow an ion exchange reaction to finally form the layered polycrystalline PbSe film. The fabrication method has the advantages of simple process, low cost, and high controllability. The PbSe film fabricated by the method is composed of a lower dense polycrystalline cubic PbSe layer and an upper loose polycrystalline cubic PbSe layer, which can be widely used in the fabrication of components in the field of photoelectric conversion or thermoelectric conversion, such as infrared (IR) sensors, solar cells, laser emitters, and thermoelectric converters.