Capacitor and method for producing same
US11784000B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2021 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A capacitor includes a silicon substrate, a conductor layer, and a dielectric layer. The silicon substrate has a principal surface including a capacitance generation region and a non-capacitance generation region. The silicon substrate has a porous part provided in a thickness direction in the capacitance generation region. The conductor layer has a surface layer part at least covering part of a surface of the capacitance generation region and a filling part filled in at least part of fine pores of the porous part. The dielectric layer is provided between an inner surface of the fine pores and the filling part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.