Method for manufacturing gallium nitride semiconductor device
US11784039B2 · kind B2 · utility
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5Claims
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Key dates
| Filing date | Apr 13, 2021 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Oct 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/268
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.