Method for forming connecting pad and semiconductor structure
US11784060B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 26, 2021 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Nov 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments provide method for forming a connecting pad. The method includes: providing a substrate; sequentially forming a conductive layer, a first pattern definition layer and a second pattern definition layer on a surface of the substrate; sequentially forming three groups of patterns intersecting with each other at 120° on the second pattern definition layer, an intersection portion of the three groups of patterns forming a hexagonal pattern definition structure on the second pattern definition layer; transferring the pattern definition structure downward, and etching away a portion of the first pattern definition layer, such that the remaining first pattern definition layer forms a columnar structure, wherein a bottom of the columnar structure is circular in shape under an action of an etching load effect; and etching the conductive layer by using the remaining first pattern definition layer as a mask, such that the remaining conductive layer forms a circular connecting pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.