Semiconductor device passive thermal management
US11784107B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2022 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Sep 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided with a first layer having a first layer conductive contact and being doped at a first concentration of a first dopant type. The first dopant type being a P type dopant. A second layer is on top the first layer and being doped at a second concentration of the first dopant type. The second concentration being less than the first concentration. A third layer is on top of the second layer and having a third layer conductive contact and being doped with a second dopant type, the second dopant type being an N type dopant. A fourth layer is on top of the third layer and having a fourth layer conductive contact and being doped with the first dopant type, wherein at least one of the first and second layers is a boron arsenide (BAs) layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.