Integrated circuit device and method of manufacturing the same
US11784122B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2022 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | May 9, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a conductive line including a metal layer and an insulation capping structure covering the conductive line. The first insulation capping structure includes a first insulation capping pattern that is adjacent to the metal layer in the insulation capping structure and has a first density, and a second insulation capping pattern spaced apart from the metal layer with the first insulation capping pattern therebetween and having a second density that is greater than the first density. In order to manufacture the integrated circuit device, the conductive line having a metal layer is formed on a substrate, a first insulation capping layer having the first density is formed directly on the metal layer, and a second insulation capping layer having the second density that is greater than the first density is formed on the first insulation capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.