Method of manufacturing semiconductor devices and semiconductor devices
US11784187B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 21, 2020 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Jul 21, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region made of a semiconductor material, a first work function adjustment material layer is formed over the gate dielectric layer, an adhesion enhancement layer is formed on the first work function adjustment material layer, a mask layer including an antireflective organic material layer is formed on the adhesion enhancement layer, and the adhesion enhancement layer and the first work function adjustment material layer are patterned by using the mask layer as an etching mask. The adhesion enhancement layer has a higher adhesion strength to the antireflective organic material layer than the first work function adjustment material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.