Epitaxial source/drain structure and method
US11784222B2 · kind B2 · utility
1Cited by
13References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 10, 2022 |
| Grant date | Oct 10, 2023 |
| Priority date | — |
| Expiry date | Jan 10, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0186
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.