Patent · US Active

Semiconductor device and semiconductor module

US11784246B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignees

Inventors

Key dates

Filing dateAug 25, 2021
Grant dateOct 10, 2023
Priority date
Expiry dateApr 7, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/511

Abstract

According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and first and second insulating members. The semiconductor member is located between the second and first electrodes, and includes a first semiconductor region a second semiconductor region between the first semiconductor region and the first electrode, a third semiconductor region between the second semiconductor region and the first electrode, a fourth semiconductor region between the second semiconductor region and the first electrode, a fifth semiconductor region between the first semiconductor region and the second electrode, a sixth semiconductor region between the fifth semiconductor region and the second electrode, and a seventh semiconductor region between the fifth semiconductor region and the second electrode. A portion of the first insulating member is between the third electrode and the semiconductor member. A portion of the second insulating member is between the fourth electrode and the semiconductor member.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.