Mercury cadmium telluride-black phosphorous van der waals heterojunction infrared polarization detector and preparation method thereof

US11784265B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Xudong Wang · Kirkland, US
• Hanxue Jiao · Shanghai, CN
• Yan-Jou Chen · Beijing, CN
• Jianlu Wang · Shanghai, CN
• Xiangjian Meng · Shanghai, CN
• Hong Shen · Omaha, US
• Tie Lin · Shanghai, CN
• Junhao Chu · Shanghai, CN

Key dates

• Filing date: Jan 26, 2022
• Grant date: Oct 10, 2023
• Expiry date: May 28, 2042

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

Disclosed are a mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector and a preparation method thereof. The structure of the detector from bottom to top comprises a substrate, a mercury cadmium telluride material, an insulating layer, a two-dimensional semiconductor black phosphorus, and metal electrodes. First, growing the mercury cadmium telluride material on the substrate, removing part of the mercury cadmium telluride by ultraviolet lithography and argon ion etching, filling with aluminum oxide as the insulating layer using an electron beam evaporation method, transferring the two-dimensional semiconductor material black phosphorus at the junction of mercury cadmium telluride and an insulating layer assisted by a polypropylene carbonate film, and preparing the metal source-drain electrodes by electron beam lithography technology combined with the lift-off process to form the mercury cadmium telluride-black phosphorus van der Waals heterojunction infrared polarization detector.