Method for preparing P-type crystalline silicon rear electrode

US11784277B2 · kind B2 · utility

Assignee

• NANTONG T-SUN NEW ENERGY CO., LTD. · CN

Inventors

• Peng Zhu · Tianjin, CN
• Guizhong Yang · Nantong, CN
• YANMEI CHEN · Nantong, CN
• Yeqing Wang · Nantong, CN

Key dates

• Filing date: Jul 12, 2019
• Grant date: Oct 10, 2023
• Expiry date: Jan 10, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for preparing a P-type crystalline silicon rear electrode, comprising: printing an all-aluminum paste on a P-type crystalline silicon rear passivation layer, then printing a linear interlayer-glass paste on the all-aluminum paste, and finally overprinting rear silver electrodes on the linear middle layer-glass paste. In a solar cell prepared using the method, good contact with silver and aluminum is kept without causing damage to the passivation layer and compromising the conductivity. In the present invention, a complete all-aluminum back surface field can be formed, leading to an improved field passivation property of an electrode region and reduced carrier recombination.