Magnetic domain wall displacement element, magnetic recording array, and semiconductor device
US11790967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2020 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Mar 1, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic domain wall displacement element includes a first ferromagnetic layer, a second ferromagnetic layer extending in a second direction and magnetically recordable, a nonmagnetic layer, and a first conductive part having a first intermediate layer and a second conductive part having a second intermediate layer, in which the first intermediate layer is sandwiched between first and second magnetization regions and exhibiting first and second magnetization directions, the second intermediate layer is sandwiched between a third magnetization region and exhibiting the second magnetization direction and a fourth magnetization region exhibiting the first magnetization direction in the first direction, and an area of the first magnetization region is larger than an area of the second magnetization region and an area of the third magnetization region is smaller than an area of the fourth magnetization region in a cross section in the first direction and the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.