Patent · US Active

Register file with write pre-charge

US11790978B2 · kind B2 · utility

0Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 23, 2019
Grant dateOct 17, 2023
Priority date
Expiry dateFeb 13, 2042

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/419
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An embodiment of a novel memory circuit is described that improves post aging performance of a shared VCC node with a write pre-charge on the supply line. A write pre-charge PMOS device is added to the shared VCC node in some embodiments. The write pre-charge circuit helps insure that the shared VCC node has a healthy voltage value at the beginning of a write phase and also enables the memory circuit to recover the shared VCC value after the write phase (e.g., immediately following), enabling a read operation after a write operation for a same register file entry or adjacent entries (e.g., entries connected to the same shared VCC node). Other embodiments are disclosed and claimed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.