Low-power terahertz magnetic nano-oscillating device
US11791082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2020 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jul 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic nano oscillating device, according to an embodiment of the present invention, comprises: a ferromagnetic layer disposed on a substrate; a non-magnetic conductive layer laminated on the ferromagnetic layer; an antiferromagnetic layer (or a ferrimagnetic layer) laminated on the non-magnetic conductive layer; and first and second electrodes respectively contacting both side surfaces of the ferromagnetic layer and the non-magnetic conductive layer. The antiferromagnetic layer (or ferrimagnetic layer) is a thin film made of a material magnetized in perpendicular or in-plane direction to a layer surface, the ferromagnetic layer is in-plane magnetized to a layer surface of the ferromagnetic layer, and an in-plane current injected into the ferromagnetic layer and the non-magnetic conductive layer through the first and second electrodes provides a spin current including a spin in a thickness direction of the thin film transferred to the antiferromagnetic layer (or ferrimagnetic layer), thereby causing magnetization precessional motion of a sub-lattice of the antiferromagnetic layer (or ferrimagnetic layer).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.