Polycrystalline film, method for forming polycrystalline film, laser crystallization device and semiconductor device
US11791160B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 15, 2020 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Dec 15, 2040 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2101/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a microstructure in which evenly distributed crystal grains line up in parallel lines extending along the surface of the film, and a no-lateral-growth region left at each of locations exposed to both ends of a grain interface, which serves as a partition between the neighboring two crystal grains. According to the present invention, there are also provided: a method for forming a polycrystalline film, such as a thin polycrystalline silicon film, a thin aluminum film, and a thin copper film, which is flat and even, in surface, electrically uniform and stable, and mechanically stable; a laser crystallization device for use in manufacture of polycrystalline films, and a semiconductor device using the polycrystalline film and having good electrical property and increased breakdown voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.