Method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device
US11791209B2 · kind B2 · utility
1Cited by
9References
18Claims
0Family size
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Key dates
| Filing date | Oct 24, 2022 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Oct 24, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method of manufacturing a semiconductor device using a thermally decomposable layer, a semiconductor manufacturing apparatus, and the semiconductor device. The method includes forming an etch target layer on a substrate, forming thermally decomposable patterns spaced apart from each other on the etch target layer, forming a first mask pattern covering at least sidewalls of the thermally decomposable patterns, and removing the thermally decomposable patterns by a heating method to expose a sidewall of the first mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.