Semiconductor device
US11791242B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Dec 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06586
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, includes: a substrate having a first surface on which a plurality of devices are disposed and a second surface, opposite to the first surface; an interlayer insulating film on the first surface of the substrate; an etching delay layer disposed in a region between the substrate and the interlayer insulating film; first and second landing pads on the interlayer insulating film; a first through electrode penetrating through the substrate and the interlayer insulating film; and a second through electrode penetrating the substrate, the etching delay layer, and the interlayer insulating film, the second through electrode having a width, greater than that of the first through electrode, wherein each of the first and second through electrodes includes first and second tapered end portions in the interlayer insulating film, each of first and second tapered end portions having a cross-sectional shape narrowing closer to the landing pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.