Radio-frequency loss reduction for integrated devices
US11791341B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Sep 16, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Sep 16, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In radio-frequency (RF) devices integrated on semiconductor-on-insulator (e.g., silicon-based) substrates, RF losses may be reduced by increasing the resistivity of the semiconductor device layer in the vicinity of (e.g., underneath and/or in whole or in part surrounding) the metallization structures of the RF device, such as, e.g., transmission lines, contacts, or bonding pads. Increased resistivity can be achieved, e.g., by ion-implantation, or by patterning the device layer to create disconnected semiconductor islands.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.