Image sensor
US11791355B2 · kind B2 · utility
0Cited by
0References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 22, 2020 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jun 18, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/805
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is includes a plurality of pixels. Each of the pixels includes a silicon photoconversion region and a material that at least partially surrounds the photoconversion region. The material has a refraction index smaller than the refraction index of silicon, and the interface between the photoconversion region of the pixel and the material is configured so that at least one ray reaching the photoconversion region of the pixel undergoes a total reflection or a plurality of successive total reflections at the interface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.