Non-galvanic interconnect for planar RF devices
US11791535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Dec 31, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/144
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A radio frequency (RF) system including first and second planar RF devices coupled by non-galvanic interconnect. According to various embodiments, a first RF device and a second RF device are separated by a dielectric layer, each of the first and second RF devices including a plurality of pads disposed on surface and surrounded by a common electrode, the common electrode configured as a grounded metal shield, wherein pads of the first RF device and pads of the second RF device face each other to provide capacitive coupling between the pads. The disclosure may reduce complexity and size of the system, and offer more reliable and easily producible interconnection between elements of the RF system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.