Resistive memory device with magnetic layer having topological spin textures for tuning
US11793002B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | May 5, 2021 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Apr 2, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory device includes a magnetic tunnel junction structure. The magnetic tunnel junction structure includes a free magnetic layer. The free magnetic layer includes a magnetic material configurable to host topological spin textures to tune a conductance state of the resistive memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.