Display device and manufacturing method thereof
US11793044B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2019 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Jun 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02068
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a display device. The display device includes: a substrate; a gate line disposed on the substrate; a transistor including a part of the gate line; and a light-emitting element connected to the transistor, in which the gate line includes a first layer including aluminum or an aluminum alloy, a second layer including titanium nitride, and a third layer including metallic titanium nitride. An N/Ti molar ratio of the metallic titanium nitride may be in a range from about 0.2 to about 0.75.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.