Magnetic tunneling junctions with a magnetic barrier
US11793086B2 · kind B2 · utility
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Key dates
| Filing date | May 6, 2019 |
| Grant date | Oct 17, 2023 |
| Priority date | — |
| Expiry date | Sep 18, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Advanced magnetic tunneling junctions (MTJs) that dramatically reduce power consumption (switching energy, ESw) while maintaining a reasonably high tunneling magnetoresistance (on/off ratio, TMR) and strong thermal stability at room temperature are described herein. The MTJs include a magnetic insulator, such as an antiferromagnetic material, as the tunnel barrier. A more energy efficient switching in the MTJs is achieved by exchange bias switching (EB) due to the magnetoelectric effect (ME) or by magnon assisted switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.