Patent · US Active

Through silicon via and redistribution layer

US11795051B2 · kind B2 · utility

0Cited by

0References

16Claims

0Family size

Assignee

X-FAB SEMICONDUCTOR FOUNDRIES GMBH · DE

Inventors

Thomas Weidner · Edenkoben, DE
Theresa Berthold · Erfurt, DE

Key dates

Filing date	Sep 25, 2020
Grant date	Oct 24, 2023
Priority date	—
Expiry date	Sep 25, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2224/05647
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device, which comprises:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.