Patent · US Active

Quantum dot composite material, preparation method, and semiconductor device

US11795394B2 · kind B2 · utility

0Cited by
6References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 11, 2021
Grant dateOct 24, 2023
Priority date
Expiry dateNov 11, 2041

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/549
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

A quantum dot (QD) composite material includes at least two structural units arranged sequentially along a radial direction. The at least two structural units include a type A1 structural unit and a type A2 structural unit. The type A1 QD structural unit has a gradient alloy composition structure with an energy level width increasing along the radial direction toward a surface, and the type A2 QD structural unit has a gradient alloy composition structure with the energy level width decreasing along the radial direction toward the surface. The two types of QD structural units are arranged alternately along the radial direction, and the energy levels in adjacent QD structural units having gradient alloy composition structures are continuous.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.