Method of chemical doping that uses CMOS-compatible processes
US11798808B1 · kind B1 · utility
1Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Jun 28, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jun 18, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.