Iodine-containing fluorocarbon and hydrofluorocarbon compounds for etching semiconductor structures
US11798811B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jun 26, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are methods for etching a silicon-containing film to form a patterned structure, methods for reinforcing and/or strengthening and/or minimizing damage of a patterned mask layer while forming a patterned structure and methods for increasing etch resistance of a patterned mask layer in a process of forming a patterned structure. The methods include using an activated iodine-containing etching compound having the formula CnHxFyIz, wherein 4≤n≤10, 0≤x≤21, 0≤y≤21, and 1≤z≤4 as an etching gas. The activated iodine-containing etching compound produces iodine ions, which are implanted into the patterned hardmask layer, thereby strengthening the patterned mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.