High aspect ratio gratings fabricated by electrodeposition
US11798844B1 · kind B1 · utility
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10Claims
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Key dates
| Filing date | Oct 15, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Jan 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method is provided for making gratings of gold or other metal in silicon substrates. The disclosed method may achieve high aspect ratios. According to the disclosed method, a silicon wafer is through-etched. A seed layer of metal is vapor-deposited on one side of the wafer, and a layer of metal is electrodeposited on the seed layer. The electrodeposited metal plugs the trenches and provides a conductive surface for subsequent electrodeposition. The trenches are then filled by electrodeposition from within the trenches, so that the walls of the metal grating grow on the metal plugs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.