Bipolar transistor and manufacturing method
US11798937B2 · kind B2 · utility
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1References
40Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Oct 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bipolar transistor includes a collector region having a first doped portion located in a substrate and a second doped portion covering and in contact with an area of the first doped portion. The collector region has a doping profile having a peak in the first portion and a decrease from this peak up to in the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.