High electron mobility transistor and high electron mobility transistor forming method
US11799000B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2022 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Dec 21, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor has a GaN epi-layer, a source ohmic contact, a drain ohmic contact, a gate structure, a first metal electrode contact and a first passivation layer. The source ohmic contact and the drain ohmic contact are disposed on the epi-layer. The gate structure is disposed on the epi-layer and between the source ohmic contact and the drain ohmic contact. The first metal electrode contact is disposed above the gate structure. The first passivation layer is sandwiched between the first metal electrode contact and the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.