Flash memory device used in neuromorphic computing system
US11800705B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Nov 30, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Dec 1, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A flash memory device is provided. The flash memory device is disposed on a substrate, a channel layer made of a two-dimensional material, sources and drains disposed at both ends of the channel layer, a tunneling insulating layer having a first dielectric constant and a tunneling insulating layer disposed on the channel layer, a floating gate made of a two-dimensional material, a blocking insulating layer disposed on the floating gate and having a second dielectric constant greater than the first dielectric constant, and an upper gate disposed on the blocking insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.