Memory cells based on superconducting and magnetic materials and methods of their control in arrays
US11800814B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 2021 |
| Grant date | Oct 24, 2023 |
| Priority date | — |
| Expiry date | Apr 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell having a Josephson junction and a magnetic junction situated in a close proximity to the Josephson junction. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer with lower coercive force can be rotated with respect to the larger coercive force magnetic layer(s). Magnetic fields produced by appropriately configured control lines carrying electric current, or spin-polarized current through the magnetic junction, can result in rotation. The magnetic junction influences the Josephson critical current of the Josephson junction, leading to distinct values of critical current which can serve as digital logic states. The so obtained memory cell can be integrated into the large arrays containing a plurality of the cells, to enable the selective READ and WRITE operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.