Transistor device, manufacturing method thereof, display substrate and display device
US11804496B2 · kind B2 · utility
0Cited by
2References
15Claims
0Family size
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Key dates
| Filing date | Apr 22, 2020 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Jun 6, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/471
Abstract
The present disclosure provides a transistor device, a manufacturing method thereof, a display substrate and a display device. The transistor device includes a base substrate, as well as a first transistor and a second transistor that are disposed on the base substrate. The first transistor includes a first active layer. The second transistor includes a second gate. The first active layer and the second gate are disposed in the same layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.