Semiconductor light-emitting devices and methods of manufacturing the same
US11804513B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 22, 2021 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Jan 20, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
A semiconductor light-emitting device includes a light-emitting pixel region and a pad region, and includes light-emitting structures, a partition wall structure, a passivation structure, and a fluorescent layer, positioned in the light-emitting pixel region, and a pad unit positioned in the pad region. The partition wall structure includes partition walls defining pixel spaces. The passivation structure surrounds the partition walls and includes a first passivation layer including a first insulating material and a second passivation layer including a second insulating material different from the first insulating material. The passivation structure includes a first portion on a top surface of the partition walls, a second portion on a sidewall of the partition walls, and a third portion between the light-emitting structures and the fluorescent layer. A first thickness of the first portion is less than or equal to a second thickness of the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.