Device comprising a transistor
US11804521B2 · kind B2 · utility
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1References
12Claims
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Assignee
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Key dates
| Filing date | Jan 26, 2022 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Jan 26, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/821
Abstract
A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.