Patent · US Active

Dislocation glide suppression for misfit dislocation free heteroepitaxy

US11804525B2 · kind B2 · utility

0Cited by
2References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 9, 2020
Grant dateOct 31, 2023
Priority date—
Expiry dateOct 9, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/173
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An epitaxial structure includes a semiconductor substrate, a dislocation blocking layer; and one or more active layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.