Semiconductor device and power conversion device
US11804555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2019 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Dec 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M7/53871
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device, wherein the semiconductor substrate includes: a semiconductor layer; and a well region, the semiconductor device includes: a surface electrode provided on a second main surface on a side opposite to a first main surface; a back surface electrode provided on the first main surface; and an upper surface film covering an end edge portion of the surface electrode and at least part of an outer side region outside an end surface of the surface electrode of the semiconductor substrate, the well region includes a portion extending to the outer side region and a portion extending to an inner side region inside the end surface of the surface electrode, and the upper surface film includes at least one outer peripheral opening part provided along an outer periphery of the surface electrode away from the surface electrode of the outer side region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.