Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications
US11805703B2 · kind B2 · utility
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Key dates
| Filing date | Sep 29, 2017 |
| Grant date | Oct 31, 2023 |
| Priority date | — |
| Expiry date | Sep 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.