Patent · US Active

MEMS device

US11806750B2 · kind B2 · utility

0Cited by
0References
14Claims
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Assignee

Inventors

Key dates

Filing dateJan 29, 2021
Grant dateNov 7, 2023
Priority date
Expiry dateJan 30, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N30/877
  • WIPO fieldChemical engineering
  • WIPO sectorChemistry

Abstract

A MEMS device includes a piezoelectric layer made of a piezoelectric single crystal, a first electrode on a first surface of the piezoelectric layer, and a first layer covering the first surface of the piezoelectric layer. At least a portion of the piezoelectric layer is included in a membrane portion. The first electrode is covered with the first layer and includes a recess. The piezoelectric layer includes a through hole that passes through the piezoelectric layer between a surface of the piezoelectric layer, which is opposite to the first direction, and the recess at a position corresponding to at least a portion of the first electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.