Formulations for chemical mechanical polishing pads and CMP pads made therewith
US11806830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Sep 27, 2041 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/22
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
CMP polishing pads or layers made from a polyurethane reaction product of a reaction mixture comprising (i) a liquid aromatic isocyanate component comprising one or more aromatic diisocyanates or a linear aromatic isocyanate-terminated urethane prepolymer, and (ii) a liquid polyol component comprising a) one or more polymeric polyols, b) from 12 to 40 wt. %, based on the total weight of the liquid polyol component, of a curative mixture of one or more small chain difunctional polyols having from 2 to 9 carbon atoms, a liquid aromatic diamine, wherein the mole ratio of the total moles of hydroxyl and amino moieties in the liquid polyol, small chain difunctional polyols and liquid aromatic diamine to mole of isocyanate in the aromatic diisocyanates or linear aromatic isocyanate-terminated urethane prepolymer ranges from 1.0:1.0 to 1.15:1.0. The polishing layer is capable of forming a total texture depth, as measured by Sdr, a parameter defined by the ISO 25178 standard, upon treatment by a surface conditioning disk, in the range of from 0 to 0.4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.