Method of enhancing electrical conduction in gallium-doped zinc oxide films and films made therefrom
US11807936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2020 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Aug 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01B5/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to a post-treatment effecting recrystallization in the deposited film, wherein the recrystallization enhances the conductivity of the film. Another method of producing gallium-doped zinc oxide films with enhanced conductivity. The method includes the steps of depositing a gallium-doped zinc oxide film on a substrate using a pulsed laser and subjecting the deposited gallium-dope zinc oxide film to an ultraviolet laser beam resulting in recrystallization in the film, wherein the recrystallization enhances the conductivity of the film. A film comprising gallium-doped zinc oxide wherein the film contains a recrystallized grain structure on its surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.