Gallium nitride semiconductor device and method for manufacturing the same
US11810783B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 13, 2021 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Jul 2, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.