Patent · US Active

Monolithic component comprising a gallium nitride power transistor

US11810911B2 · kind B2 · utility

0Cited by

25References

5Claims

0Family size

Assignees

STMicroelectronics Application GMBH · DE
STMicroelectronics (Tours) SAS · FR

Inventors

Mathieu Rouviere · Tours, FR
Arnaud Yvon · Saint-Cyr-sur-Loire, FR
Mohamed SAADNA · Saint-Cyr-sur-Loire, FR
Vladimir SCARPA · Düsseldorf, DE

Key dates

Filing date	Jun 9, 2020
Grant date	Nov 7, 2023
Priority date	—
Expiry date	Jun 25, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/513
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.