Patent · US Active

Fin semiconductor device and method for making the same

US11810965B2 · kind B2 · utility

0Cited by

0References

8Claims

0Family size

Assignee

Shanghai Huali Integrated Circuit Corporation · CN

Inventors

Qiuming Huang · Shanghai, CN
Jun Tan · Shanghai, CN
Qiang Yan · Shanghai, CN

Key dates

Filing date	May 21, 2021
Grant date	Nov 7, 2023
Priority date	—
Expiry date	Feb 10, 2042

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y10/00
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A manufacturing method of a fin semiconductor device comprises: providing a substrate, wherein a fin channel base is patterned on and in contact with the substrate; epitaxially growing a top part of the fin channel base and extending the top part of the fin channel base sideways and upward to form a fin channel core; oxidizing the fin channel base to form a fin channel structure, wherein the fin channel structure comprises the fin channel core surrounded with an oxide layer at the top part of the fin channel base and an intermediate part of the fin channel base under the top part; and removing the oxide layer to expose the fin channel core, wherein the fin channel core suspends over the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.