Integrated infrared circular polarization detector with high extinction ratio and design method thereof

US11810988B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Jing Zhou · 安丰镇, CN
• Zeshi Chu · Shanghai, CN
• Xu Dai · Shanghai, CN
• Yu-Chen Yu · Taoyuan, TW
• Mengke Lan · Shanghai, CN
• Shangkun Guo · Shanghai, CN
• Jie Deng · South Burlington, US
• Xiaoshuang Chen · Shanghai, CN
• Qingyuan Cai · Hangzhou City, CN
• Fangzhe Li · 安丰镇, CN
• Zhaoyu Ji · Shanghai, CN

Key dates

• Filing date: Nov 10, 2020
• Grant date: Nov 7, 2023
• Expiry date: Nov 10, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/1248

Abstract

The present disclosure provides an integrated infrared circular polarization detector with a high extinction ratio and a design method thereof. The detector structurally includes a metal reflective layer, a bottom electrode layer, a quantum well layer, a top electrode layer, and a two-dimensional chiral metamaterial layer. Under circularly polarized light with the selected handedness, surface plasmon polariton waves are generated at the interface between the two-dimensional chiral metamaterial layer and the semiconductor, and has a main electric field component aligned with the absorption direction of the quantum wells, thereby enhancing the absorption of the quantum wells. Under circularly polarized light with the opposite handedness, since most of the optical power is reflected, surface plasmon polariton waves cannot be effectively excited, and the absorption of the quantum wells is extremely low, thus realizing the capability of infrared circular polarization detection with a high extinction ratio.