Patent · US Active

Thermal interface materials

US11811276B1 · kind B1 · utility

0Cited by
1References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2022
Grant dateNov 7, 2023
Priority date
Expiry dateAug 31, 2042

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH02M7/5387
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A power electronics converter includes a multi-layer planar carrier substrate, and a converter commutation cell including a power circuit. The power circuit includes at least one power semiconductor switching element, each of which is comprised in a power semiconductor prepackage. Each power semiconductor prepackage includes one or more power semiconductor switching elements embedded in a solid insulating material. A heat sink is arranged to remove heat from the respective power semiconductor prepackage. A thermal interface layer is arranged between a heat removal side of the respective power semiconductor prepackage and the heat sink. The thermal interface layer has a thermal conductivity and a mechanical compressibility. A converter parameter, which is defined as the mechanical compressibility of the thermal interface layer divided by the thermal conductivity of the thermal interface layer, satisfies 0.1 MNK/Wm<Ω<1 GNK/Wm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.