Electronic device and a method for suppressing noise for an electronic device
US11811378B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 24, 2019 |
| Grant date | Nov 7, 2023 |
| Priority date | — |
| Expiry date | Oct 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/20
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention relates to an electronic device, comprising: —a GFET; —noise suppression means comprising: —a modulation unit applying to a gate (G) of the GFET a signal Vg with frequency fm to modulate charge carrier density of a graphene channel around the charge neutrality point between charge carrier density values at frequency fm, —a control unit (CU), and—a demodulation circuit which is CMOS-implemented and that: —comprises first and second circuital branches alternately switchable to demodulate an electrical signal of frequency fm; or—is configured to generate and apply a signal Vb with frequency fmb to a source (S) of the GFET continuously, simultaneously and with a delay td to induce a phase with respect to Vg to yield a maximal demodulated output signal (So). The present invention also concerns to a method for suppressing noise for the device of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.